Patent Number: 6,165,555

Title: Method for forming copper film using chemical vapor deposition

Abstract: A chemical vapor deposition apparatus and a copper film formation method are disclosed. The chemical vapor deposition apparatus includes a process gas delivery unit including a first storing unit using a liquid deposition source, a delivery unit for transferring a liquid deposition source in the first storing unit to an evaporator, and an evaporator for vaporizing the liquid deposition source transferred from the delivery unit and supplying a process gas; and a reaction chamber for receiving the process gas from the process gas delivery unit and deposition a predetermined thin film on a wafer or substrate mounted therein.

Inventors: Jun; Chi Hoon (Daejeon, KR), Kim; Youn Tae (Daejeon, KR), Baek; Jong Tae (Daejeon, KR)

Assignee: Electronics and Telecommunications Research Institute

International Classification: C23C 16/18 (20060101); C23C 16/448 (20060101); H01L 21/02 (20060101); H01L 21/285 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); C23C 016/18 ()

Expiration Date: 12/26/2017