Patent Number: 6,165,556

Title: High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film

Abstract: There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

Inventors: Kawahara; Takaaki (Tokyo, JP), Yamamuka; Mikio (Tokyo, JP), Makita; Tetsuro (Tokyo, JP), Horikawa; Tsuyoshi (Tokyo, JP), Yuuki; Akimasa (Tokyo, JP), Shibano; Teruo (Tokyo, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha

International Classification: C23C 16/40 (20060101); H01L 21/02 (20060101); H01L 21/316 (20060101); H01L 21/314 (20060101); C23C 016/40 ()

Expiration Date: 12/26/2013