Patent Number: 6,165,567

Title: Process of forming a semiconductor device

Abstract: A film is formed over a substrate using a physical vapor deposition method. When using ionized metal plasma physical vapor deposition, the deposition chamber configuration or operating parameters are adjusted to achieve the desired film characteristics. If the film is to be substantially uniform in thickness across a substrate, the deposition species density is made higher at locations away from the center of the substrate.

Inventors: Ventzek; Peter Lowell George (Austin, TX), Coronell; Daniel G. (Austin, TX), Hartig; Michael J. (Austin, TX), Arnold; John C. (Austin, TX)

Assignee: Motorola, Inc.

International Classification: C23C 14/35 (20060101); C23C 14/04 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); C23C 014/34 (); C23C 014/48 ()

Expiration Date: 12/26/2017