Patent Number: 6,165,607

Title: Sputtering target and antiferromagnetic film and magneto-resistance effect element formed by using the same

Abstract: A sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target, at least as a part of target texture, comprises one member selected from a group of an alloy phase and a compound phase formed between the R element and Mn. In addition, oxygen content in the target is 1 weight % or less (including 0). With such a sputtering target, an anti-ferromagnetic material film consisting of RMn alloy excellent in corrosion resistivity and thermal performance can be stabilized in its film composition and film quality. By employing the anti-ferromagnetic material film, when an exchange coupling film is formed by stacking the anti-ferromagnetic material film and the ferromagnetic material film, sufficient exchange coupling force is obtained stably. Such an exchange coupling film can be used in a magneto-resistance effect element and the like.

Inventors: Yamanobe; Takashi (Machida, JP), Fujioka; Naomi (Zama, JP), Ishigami; Takashi (Yokohama, JP), Katsui; Nobuo (Yokohama, JP), Fuke; Hiromi (Kawasaki, JP), Saito; Kazuhiro (Yokohama, JP), Iwasaki; Hitoshi (Yokosuka, JP), Sahashi; Masashi (Yokohama, JP), Watanabe; Takashi (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: C23C 14/34 (20060101); C23C 14/14 (20060101); H01F 41/18 (20060101); H01F 41/30 (20060101); H01F 41/14 (20060101); H01F 10/32 (20060101); G11B 5/39 (20060101); H01L 43/00 (20060101); H01F 10/00 (20060101); H01L 43/12 (20060101); G11B 005/66 ()

Expiration Date: 12/26/2017