Patent Number: 6,165,622

Title: Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film

Abstract: A ferroelectric thin film includes a ferroelectric crystal containing Bi, Ti and O as constituent elements, wherein the composition ratio of Bi/Ti in the ferroelectric thin film is shifted from a stoichiometric composition. Also, a substrate provided with a ferroelectric thin film, a device having a capacitor structure used for a ferroelectric memory device, a pyroelectric sensor device, a piezoelectric device or the like, and a method for manufacturing a ferroelectric thin film are disclosed.

Inventors: Kijima; Takeshi (Omiya, JP), Matsunaga; Hironori (Noda, JP)

Assignee: Sharp Kabushiki Kaisha

International Classification: C23C 16/02 (20060101); C23C 16/40 (20060101); H01L 21/02 (20060101); H01L 21/316 (20060101); H01L 21/314 (20060101); B32B 017/00 ()

Expiration Date: 12/26/2017