Patent Number: 6,165,652

Title: Pattern forming method and pattern forming apparatus

Abstract: A method of forming a photomask of a semiconductor device comprising the steps of forming a photosensitive film on a substrate and exposing the photosensitive film on the substrate by radiating with a radiation beam a plurality of butting unit regions defining butting portions between the butting unit regions and controlling said radiating of the butting unit region so that the butting portions of the butting unit regions are formed only in portions corresponding to isolation regions or alternatively, they are not formed in portions corresponding to contact areas.

Inventors: Inoue; Soichi (Yokohama, JP), Higashikawa; Iwao (Tokyo, JP), Ogawa; Yoji (Yokohama, JP), Hara; Shigehiro (Kawasaki, JP), Yamamoto; Kazuko (Tokyo, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: G03F 7/20 (20060101); G03F 009/00 ()

Expiration Date: 12/26/2013