Patent Number: 6,166,319

Title: Multi-junction photovoltaic device with microcrystalline I-layer

Abstract: A photovoltaic element of the present invention is a photovoltaic element having a plurality of pin junctions each formed of a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer each comprising a non-single-crystal material comprising a Group IVA element as a principal component, the photovoltaic element having a first pin junction comprising microcrystal silicon carbide (hereinafter referred to as microcrystal SiC) as a principal component of the i-type semiconductor layer and a second pin junction comprising microcrystal silicon (hereinafter referred to as microcrystal Si) as a principal component of the i-type semiconductor layer, wherein the first pin junction is provided closer to the light incidence side than the second pin junction. Provided thereby are a low cost photovoltaic element which exhibits little photodeterioration and with a high photoelectric conversion efficiency, and production method of the photovoltaic element capable of forming i-type microcrystal silicon and microcrystal SiC at a practical deposition rate.

Inventors: Matsuyama; Jinsho (Kyoto, JP)

Assignee: Canon Kabushiki Kaisha

International Classification: H01L 25/00 (20060101); H01L 31/00 (20060101); H01L 31/04 (20060101); H01L 31/075 (20060101); H01L 31/06 (20060101); H01L 31/18 (20060101); H01L 025/00 (); H01L 031/00 ()

Expiration Date: 12/26/2017