Patent Number: 6,166,396

Title: Semiconductor devices

Abstract: In an active matrix liquid crystal display (LCD) device, a conductor line interconnecting a drain of each thin-film transistor and a corresponding pixel electrode constructed with indium tin oxide (ITO) is formed in a three-layer structure in which an aluminum film is sandwiched between a pair of titanium films. This construction prevents poor contact and deterioration of reliability because electrical contact is established between one titanium film and semiconductor and between the other titanium film and ITO. The aluminum film has low resistance which is essential for ensuring high performance especially in large-screen LCDs.

Inventors: Yamazaki; Shunpei (Tokyo, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: G02F 1/13 (20060101); G02F 1/1362 (20060101); H01L 21/02 (20060101); H01L 27/12 (20060101); H01L 21/336 (20060101); H01L 029/04 ()

Expiration Date: 12/26/2017