Patent Number: 6,166,398

Title: Thin film transistors

Abstract: A method of forming a thin film transistor includes, a) forming a thin film transistor layer of semiconductive material; b) providing a gate operatively adjacent the thin film transistor layer; c) forming at least one electrically conductive sidewall spacer over at least one lateral edge of the gate, the spacer being electrically continuous therewith; and d) providing a source region, a drain region, a drain offset region, and a channel region in the thin film transistor layer; the drain offset region being positioned operatively adjacent the one electrically conductive sidewall spacer and being gated thereby. The spacer is formed by anisotropically etching a spacer forming layer.

Inventors: Batra; Shubneesh (Boise, ID), Manning; Monte (Kuna, ID), Banerjee; Sanjay (Austin, TX), Jung; LeTien (Hsin-Chu, TW)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/02 (20060101); H01L 21/28 (20060101); H01L 29/49 (20060101); H01L 29/66 (20060101); H01L 29/40 (20060101); H01L 21/336 (20060101); H01L 29/786 (20060101); H01L 029/04 ()

Expiration Date: 12/26/2017