Patent Number: 6,166,400

Title: Thin film transistor of liquid crystal display with amorphous silicon active layer and amorphous diamond ohmic contact layers

Abstract: In thin film transistor, an amorphous diamond is used as an ohmic layer formed between an active layer and a source and drain electrodes. Specifically, in a inverse staggered type thin film transistor, a gate electrode and a gate insulating layer are formed on an insulating substrate. On the gate insulating layer is formed an active layer. An etch stopper is formed on the active layer, overlapping with the gate electrode. Thereafter, an amorphous diamond is overlappingly formed on the gate electrode on a resultant structure and then a metal layer is formed on the resultant in which the ohmic layer is formed. The metal layer and the amorphous diamond layer is patterned until the etch stopper is exposed, forming the ohmic layer and a source electrode and a drain electrode.

Inventors: Chang; Park Kyu (Seoul, KR), Jin; Seo Kuk (Songnam, KR)

Assignee: Hyundai Electronics Industries Co., Ltd.

International Classification: H01L 29/66 (20060101); H01L 29/786 (20060101); H01L 031/0312 (); H01L 029/786 ()

Expiration Date: 12/26/2017