Patent Number: 6,166,402

Title: Pressure-contact type semiconductor element and power converter thereof

Abstract: A double circular gate conductor 9 comprises a first circular gate conductor 7 connected to a gate electrode 2a, a second circular gate conductor 8, and a connecting conductor which connects the first circular gate conductor 7 and the second circular gate conductor 8, and is configured so as to equalize the voltage drop due to self-inductance or mutual inductance between the first circular gate conductor 7, second circular gate conductor 8 and cathode post electrode 4. In this manner it is possible to guarantee more or less uniform parallel inductance over the surface of the element.

Inventors: Kodani; Kazuya (Tokyo, JP), Matsumoto; Toshiaki (Tokyo, JP), Tobita; Masayuki (Tokyo, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 23/48 (20060101); H01L 029/74 (); H01L 031/111 ()

Expiration Date: 12/26/2017