Patent Number: 6,166,404

Title: Semiconductor device in which at least two field effect transistors having different threshold voltages are formed on a common base

Abstract: A semiconductor device including field effect transistors having different threshold voltages formed on a common base, characterized by including: a first field effect transistor having a p-n junction gate; and a second field effect transistor having a Schottky junction gate; wherein a threshold voltage of the first field effect transistor is set on the basis of a depth of the p-n junction, and a threshold voltage of the second field effect transistor is set on the basis of selection of a barrier potential of the Schottky junction.

Inventors: Imoto; Tsutomu (Kanagawa, JP), Wada; Shinichi (Kanagawa, JP)

Assignee: Sony Corporation

International Classification: H01L 21/70 (20060101); H01L 21/8234 (20060101); H01L 27/098 (20060101); H01L 27/085 (20060101); H01L 27/095 (20060101); H01L 029/80 (); H01L 031/112 (); H01L 031/072 (); H01L 031/109 (); H01L 031/0328 ()

Expiration Date: 12/26/2017