Patent Number: 6,166,405

Title: Solid-state imaging device

Abstract: A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a detecting region formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate, a gate electrode formed on the insulating film above the region between the photo-receiving portion and the detecting region; and a read-out circuit, which is electrically connected to the detecting portion. A reflection reducing film is formed on the insulating film above the region including at least one part of the photo-receiving portion and excluding at least one part of the detecting portion in the semiconductor substrate. With this solid-state imaging device and with the method for manufacturing the same, a highly sensitive MOS solid-state imaging device and the method for manufacturing the same are provided.

Inventors: Kuriyama; Toshihiro (Shiga, JP), Tanaka; Syouji (Nara, JP)

Assignee: Matsushita Electronics Corporation

International Classification: H01L 27/146 (20060101); H01L 031/062 (); H01L 031/113 (); H01L 029/04 (); H01L 031/036 ()

Expiration Date: 12/26/2017