Patent Number: 6,166,411

Title: Heat removal from SOI devices by using metal substrates

Abstract: In one embodiment, the present invention relates to a method of forming a silicon-on-insulator substrate involving providing a metal wafer; forming a low melting point oxide layer over the metal wafer; forming a first insulation layer over the low melting point oxide layer to provide a first structure; providing a second structure comprising a silicon layer and a second insulation layer; bonding the first structure and the second structure together so that the first insulation layer is adjacent the second insulation layer forming a buried insulation layer; and removing a portion of the silicon layer thereby providing the silicon-on-insulator substrate comprising a silicon device layer, the buried insulation layer, the low melting point oxide layer, and the metal wafer.

Inventors: Buynoski; Matthew (Palo Alto, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/70 (20060101); H01L 23/34 (20060101); H01L 29/66 (20060101); H01L 21/762 (20060101); H01L 23/373 (20060101); H01L 29/786 (20060101); H01L 027/01 (); H01L 029/00 (); H01L 023/495 (); H01L 021/30 ()

Expiration Date: 12/26/2017