Patent Number: 6,166,413

Title: Semiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereof

Abstract: An n-channel type field effect transistor and a p-channel type field effect transistor are fabricated on a p-type well and an n-type well, respectively, and the arsenic-doped gate electrode of the n-channel type field effect transistor is thinner than the boron-doped gate electrode of the p-channel type field effect transistor so that the arsenic and the boron are appropriately diffused in the gate electrodes during a rapid annealing.

Inventors: Ono; Atsuki (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01L 21/70 (20060101); H01L 21/8238 (20060101); H01L 029/76 ()

Expiration Date: 12/26/2017