Patent Number: 6,166,415

Title: Semiconductor device with improved noise resistivity

Abstract: A dummy pattern that is inserted to stabilize the form of a transistor active region is implanted with an impurity of the same conductivity type as a well, and the impurity-doped region of the dummy pattern is supplied with a potential through a metal interconnection. Hence, fluctuation of a well potential due to noise hardly occurs, and a semiconductor device enduring latch up, for example, to a greater extent can be provided.

Inventors: Sakemi; Kazuhiro (Hyogo, JP), Kikuda; Shigeru (Hyogo, JP), Kawasaki; Satoshi (Hyogo, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha

International Classification: H01L 21/70 (20060101); H01L 21/8234 (20060101); H01L 21/762 (20060101); H01L 029/76 (); H01L 029/94 (); H01L 031/062 (); H01L 031/113 (); H01L 031/119 ()

Expiration Date: 12/26/2017