Patent Number: 6,166,417

Title: Complementary metal gates and a process for implementation

Abstract: A transistor device includes a gate dielectric overlying a substrate, a barrier layer overlying the gate dielectric, and a gate electrode overlying the barrier layer. The barrier layer of the device has a physical property that inhibits interaction between the gate dielectric and the gate electrode.

Inventors: Bai; Gang (San Jose, CA), Liang; Chunlin (San Jose, CA)

Assignee: Intel Corporation

International Classification: H01L 21/70 (20060101); H01L 21/02 (20060101); H01L 21/28 (20060101); H01L 29/49 (20060101); H01L 29/40 (20060101); H01L 21/8238 (20060101); H01L 029/78 ()

Expiration Date: 12/26/2017