Patent Number: 6,166,425

Title: Semiconductor device having a resistance element with a reduced area

Abstract: A semiconductor device which has a MOS transistor having a gate electrode composed of a first conductive film formed on a silicon substrate; a resistance element composed of a second conductive film formed on a field insulating film formed on the silicon substrate; and a plurality of conductive film patterns formed in parallel at predetermined intervals on the surface of the field insulating film, wherein the plurality of conductive film patterns are of the first conductive film type connected with a predetermined potential, and the top surface and side of each of the plurality of conductive film patterns are covered with an insulating film; wherein the resistance element is formed reciprocative-crossing several times in the orthogonal direction to the plurality of conductive film patterns through the insulating film on the plurality of conductive film patterns.

Inventors: Sakao; Masato (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01L 21/70 (20060101); H01L 21/02 (20060101); H01L 21/8242 (20060101); H01L 27/06 (20060101); H01L 029/00 ()

Expiration Date: 12/26/2017