Patent Number: 6,166,428

Title: Formation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysilicon

Abstract: A semiconductor device having at least a first and second type of devices formed in the substrate of the semiconductor device and having a hydrogen free barrier layer formed by implanting nitrogen into a layer of amorphous silicon or polysilicon formed on the surface of the semiconductor device. A hydrogen getter layer is formed on the semiconductor device under the barrier layer. The hydrogen getter layer is removed from portions of the semiconductor device on which salicide layers are to be formed.

Inventors: Mehta; Sunil D. (San Jose, CA), En; William G. (Sunnyvale, CA), Chan; Darin Arthur (Campbell, CA), Lee; Raymond Takling (Sunnyvale, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/70 (20060101); H01L 21/02 (20060101); H01L 21/28 (20060101); H01L 23/16 (20060101); H01L 21/768 (20060101); H01L 23/26 (20060101); H01L 023/58 ()

Expiration Date: 12/26/2017