Patent Number: 6,166,436

Title: High frequency semiconductor device

Abstract: A high frequency semiconductor device includes: a substrate having a substantially flat principal surface, with a predetermined circuit pattern including at least an input line, an output line, and a ground electrode provided on the principal surface; and a transistor which has a drain electrode, a source electrode, and a gate electrode and is mounted on the substrate by a flip chip mounting. The source electrode and the ground electrode are connected to each other by a first bump in the flip chip mounting.

Inventors: Maeda; Masahiro (Osaka, JP), Nakamura; Morio (Katano, JP), Yoshida; Takayuki (Neyagawa, JP), Yamazaki; Masazumi (Kamakura, JP)

Assignee: Matsushita Electric Industrial Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 21/56 (20060101); H01L 23/48 (20060101); H01L 23/66 (20060101); H01L 23/482 (20060101); H01L 23/58 (20060101); H01L 021/44 (); H01L 021/60 ()

Expiration Date: 12/26/2017