Patent Number: 6,166,584

Title: Forward biased MOS circuits

Abstract: The present invention includes a semiconductor circuit including one or more transistors each having a body and one or more a variable voltage source to selectively provide a forward bias to the bodies at certain times and to provide a non-forward bias to the body at other times. The semiconductor circuit includes voltage control circuitry to control whether the variable voltage source provides the forward bias or the non-forward bias. In some embodiments of the invention, the voltage control circuit controls the variable voltage source such that the forward bias is provided during an active mode of the transistors and the non-forward bias is provided during a standby mode of the transistors. In some embodiments of the invention, the voltage control circuitry derives a priori knowledge of the mode of the transistor.

Inventors: De; Vivek K. (Hillsboro, OR)

Assignee: Intel Corporation

International Classification: H01L 29/10 (20060101); H01L 27/092 (20060101); H01L 27/085 (20060101); H01L 29/02 (20060101); H03K 19/0948 (20060101); H03K 003/01 ()

Expiration Date: 12/26/2017