Patent Number: 6,166,589

Title: Reference voltage generator circuit for an integrated circuit device

Abstract: The present invention relates to a reference voltage generator circuit for a semiconductor device that enables generating a reference voltage considering various parameters such as temperature variation. There is provided a reference voltage generator circuit coupled between a power supply voltage and a ground voltage for generating a reference voltage responsive to a plurality of current path control signals. A control circuit generates the plurality of the current path control signals. The control circuit includes a voltage division circuit coupled between the power supply voltage and the ground voltage for generating a divided voltage responsive to a plurality of externally applied code signals. A comparison circuit compares the divided voltage and the reference voltage and generates a comparison signal as a result of the comparison. An output circuit receives the comparison signal from the comparison circuit responsive to the plurality of the code signals and generates the plurality of the current path control signals.

Inventors: Park; Jong-Min (Suwon, KR)

Assignee: Samsung Electronics, Co., Ltd.

International Classification: G05F 3/08 (20060101); G05F 3/24 (20060101); G05F 001/10 ()

Expiration Date: 12/26/2017