Patent Number: 6,166,607

Title: Semiconductor test structure formed in cutting path of semiconductor water

Abstract: A semiconductor test structure includes a semiconductor test device having at least one group of test cells that are connected in series and looped back so as to form an oscillator. Each test cell includes a base cell that is formed at least partially in the semiconductor substrate and an ancillary structure that is connected to at least one of the terminals of the base cell. Further, the ancillary structure is distributed over at least two metallization levels that are above the base cell, and is formed on each metallization level by first and second mutually entangled networks of metal tracks that are electrically arranged so as to form an at least capacitive ancillary structure.

Inventors: Schoellkopf; Jean-Pierre (Grenoble, FR)

Assignee: STMicroelectronics S.A.

International Classification: H01L 23/544 (20060101); H03B 005/00 (); G01R 031/28 (); H01L 021/66 (); H01L 027/04 ()

Expiration Date: 12/26/2017