Patent Number: 6,166,785

Title: Thin film transistor and fabricating method thereof having patterned active layer

Abstract: The present invention relates to a thin film transistor and a fabricating method thereof which is applied to a buried bus coplanar type TFT wherein the source and drain wires are located on a substrate. The present invention includes an insulated substrate, a source electrode and a drain electrode on the insulated substrate, a first insulating layer on the insulated substrate wherein the first insulating layer has a predetermined pattern, an active layer on the first insulating layer wherein the active layer has a source region, a channel region and a drain region, a second insulating layer covering the active layer, and a gate electrode on the second insulating layer over the channel region.

Inventors: Ha; Yong Min (Anyang, KR)

Assignee: LG. Philips LCD Co., Ltd.

International Classification: H01L 21/70 (20060101); H01L 27/12 (20060101); H01L 21/84 (20060101); G02F 001/136 ()

Expiration Date: 12/26/2017