Patent Number: 6,166,891

Title: Magnetoresistive sensor for high temperature environment using iridium manganese

Abstract: A magnetoresistive read sensor fabricated on a substrate includes a ferromagnetic layer that is exchange coupled with an antiferromagnetic layer made of a defined composition of iridium manganese. A tantalum layer is used so that the exchange field and coercivity do not change with variations in annealing temperature. The antiferromagnetic layer is formed with a material composition of Ir.sub.x Mn.sub.100-x, wherein x is in the range of 15<.times.>23. In an embodiment of a spin valve structure, the tantalum layer is disposed over the substrate and the antiferromagnetic layer is in direct contact with a pinned ferromagnetic layer. In another embodiment, the IrMn layer is formed over a soft active layer. In a third embodiment using exchange pinning, spaced IrMn regions are formed over the active magnetoresistive layer to define the sensor track width.

Inventors: Lederman; Marcos M. (San Francisco, CA), Nepela; Daniel A. (San Jose, CA), Tong; Hua-Ching (San Jose, CA)

Assignee: Read-Rite Corporation

International Classification: G01R 33/09 (20060101); G01R 33/06 (20060101); G11B 5/39 (20060101); G11B 005/127 ()

Expiration Date: 12/26/2017