Patent Number: 6,166,945

Title: Method for controlling memory cell having long refresh interval

Abstract: A method for controlling a memory cell capable of extending a refresh interval and lengthening a storing time of a cell data by raising a data of a high level voltage stored in the cell capacitor above Vdd, thereby reducing power consumption.

Inventors: Choi; Kyun-Kyu (Seoul, KR), Jeon; Yong-Weon (Seoul, KR)

Assignee: LG Semicon Co., Ltd.

International Classification: G11C 11/24 (20060101); G11C 11/21 (20060101); G11C 11/406 (20060101); G11C 011/24 ()

Expiration Date: 12/26/2017