Patent Number: 6,166,946

Title: System and method for writing to and reading from a memory cell

Abstract: The present invention generally relates to a memory cell for storing data values. The memory cell of the present invention utilizes a storage element, a multiplexer, first and second bit lines, first and second switching elements, and a switching mechanism. The storage element has a first port and a second port and maintains a value of the first port as an inverse of the value of the second port. The first switching element is connected to the first port and the first bit line, and the second switching element is connected to the second port and the second bit line. An input value to be written to the memory cell is received by the switching mechanism, which transmits the input value to one of the bit lines based on a value of a mode signal. Depending on which bit line is to receive the input value, the switching mechanism may invert the input value before transmitting it to the one bit line. The multiplexer receives the value of the other bit line and selects this value based on the value of the mode signal. The multiplexer then transmits the selected value as an output of the memory cell.

Inventors: Naffziger; Samuel D (Ft. Collins, CO)

Assignee: Hewlett-Packard Company

International Classification: G11C 11/412 (20060101); G11C 8/16 (20060101); G11C 8/00 (20060101); G11C 011/00 ()

Expiration Date: 12/26/2017