Patent Number: 6,166,951

Title: Multi state sensing of NAND memory cells by applying reverse-bias voltage

Abstract: A method and circuit for sensing multi states of a NAND memory cell by applying reverse bias voltage at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the applied reverse P well bias, and sensing the memory cell state.

Inventors: Derhacobian; Narbeh (Belmont, CA), Fang; Hao (Cupertino, CA), Han; Michael (San Jose, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: G11C 16/06 (20060101); G11C 16/26 (20060101); G11C 11/56 (20060101); G11C 16/04 (20060101); G11C 016/04 ()

Expiration Date: 12/26/2017