Patent Number: 6,166,965

Title: Semiconductor memory device having push-pull type output circuit formed by two N-channel MOS transistors

Abstract: In a semiconductor memory device including a data bus, a data bus charging circuit for charging the data bus, a data bus discharging circuit for discharging the data bus in accordance with a cell read data signal, and a push-pull type output circuit formed by a first N-channel MOS transistor connected between a first power supply terminal and an output terminal and a second N-channel MOS transistor connected between the output terminal and a second power supply terminal, a step-up circuit is connected between the data bus and a gate of the first N-channel MOS transistor to generate a step-up voltage in accordance with a voltage at the data bus.

Inventors: Yamakoshi; Hiroyuki (Kanagawa, JP)

Assignee: NEC Corporation

International Classification: G11C 7/10 (20060101); G11C 016/04 ()

Expiration Date: 12/26/2017