Patent Number: 6,166,968

Title: Semiconductor memory having a negative voltage generator for an erasing operation

Abstract: A voltage supply generator for a semiconductor memory improves the reliability of the erasing operation. A Vcc voltage detecting unit detects an intensity of a Vcc voltage, which is an external power source, to provide first and second Vcc voltages. A charge pump circuit receives the Vcc voltage and provides a VNEG voltage. A clock circuit applies a clock pulse to the charge pump circuit. A voltage regulating circuit receives the first and second Vcc voltages to monitor and control the VNEG voltage and provides a constant VNEG voltage.

Inventors: Song; Ju Hyeon (Chungcheongbuk-do, KR)

Assignee: Hyundai Electronics Industries Co., Ltd.

International Classification: G11C 5/14 (20060101); G11C 16/06 (20060101); G11C 16/30 (20060101); G11C 005/14 (); G05F 001/10 ()

Expiration Date: 12/26/2017