Patent Number: 6,166,982

Title: High voltage switch for eeprom/flash memories

Abstract: A high voltage switch for use in an EEPROM/FLASH memory that may be implemented using a twin-well process (e.g., using only P-channel transistors). The circuit comprises a positive switch configured to present a first and a second switch signal in response to (i) one or more select signals and (ii) an address signal and a second switch configured to present a programing voltage in response to (i) the select signals, (ii) the first and second switch signals and (iii) a high voltage source. A high voltage positive and negative pump may provide the high voltage source.

Inventors: Murray; Kenelm (Sunnyvale, CA), Montanari; Donato (Mountain View, CA)

Assignee: Cypress Semiconductor Corp.

International Classification: G11C 16/12 (20060101); G11C 16/06 (20060101); G11C 007/00 ()

Expiration Date: 12/26/2017