Patent Number: 6,167,071

Title: Semiconductor laser

Abstract: An end face emitting type semiconductor laser has a first semiconductor layer including a first clad layer, an active layer and a second semiconductor layer including a second clad layer superposed one on another in this order on a substrate. A first electrode is formed on the substrate or the first semiconductor layer and a second electrode is formed on the upper surface of the second semiconductor layer. The second semiconductor layer is transparent to light of a wavelength at which the semiconductor laser oscillates, and a pattern of concavity and convexity is formed on the upper surface of the second semiconductor layer in a region corresponding to an oscillating part of the semiconductor laser.

Inventors: Hayakawa; Toshiro (Kanagawa-ken, JP)

Assignee: Fuji Photo Film Co., Ltd.

International Classification: H01S 5/10 (20060101); H01S 5/00 (20060101); H01S 5/12 (20060101); H01S 005/00 ()

Expiration Date: 12/26/2017