Patent Number: 6,167,111

Title: Exposure apparatus for synchrotron radiation lithography

Abstract: An apparatus for transferring a pattern of a mask onto a substrate with radiation light from a synchrotron radiation light source, includes a first mirror for collectively reflecting radiation light from the synchrotron radiation light source, and a second mirror for reflecting radiation light from the first mirror and for projecting the same to the mask. When a light ray advancing from a light emission point of the light source toward a center of a predetermined region of the mask, to be transferred to the substrate, is taken as a chief ray, when a normal to each of the first and second mirrors at an incidence position of a corresponding chief ray is taken as a Z axis, when a direction perpendicular to a plane defined by the Z axis of each mirror and a corresponding chief ray is taken as an X axis, and when a Y axis is taken along a direction perpendicular to the Z axis and X axis of each mirror, the first mirror has a reflection surface of a shape which is concave with respect to the X axis direction and concave with respect to the Y axis direction, while the second mirror has a reflection surface of a shape which is convex with respect to the Y axis direction.

Inventors: Watanabe; Yutaka (Tochigi-ken, JP), Uzawa; Shunichi (Tokyo, JP), Fukuda; Yasuaki (Utsunomiya, JP), Mizusawa; Nobutoshi (Yamato, JP), Hara; Shinichi (Saitama-ken, JP)

Assignee: Canon Kabushiki Kaisha

International Classification: G21K 1/06 (20060101); G03F 7/20 (20060101); G21K 1/00 (20060101); G21K 005/00 ()

Expiration Date: 12/26/2013