Patent Number: 6,167,835

Title: Two chamber plasma processing apparatus

Abstract: A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically of a polarity identical in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which an object to be processed is placed. Arrangement is provided so that the polarity of magnets located adjacent radially is opposite. An insulation substrate is provided between a partition panel and a processing chamber to electrically insulate a plasma generation chamber. Direct current voltage is applied in a pulsive manner to the plasma generation chamber. Thus, a plasma processing apparatus can be provided that allows formation of plasma uniformly over a large area, and processing of a specimen of a large diameter uniformly.

Inventors: Ootera; Hiroki (Hyogo, JP), Taki; Masakazu (Hyogo, JP), Shintani; Kenji (Hyogo, JP), Nishikawa; Kazuyasu (Hyogo, JP)

Assignee: Mitsubishi Denki Kabushiki Kaisha

International Classification: H01J 37/32 (20060101); C23C 016/00 ()

Expiration Date: 01/02/2018