Patent Number: 6,167,836

Title: Plasma-enhanced chemical vapor deposition apparatus

Abstract: There is provided a plasma-enhanced chemical vapor deposition apparatus including a reaction chamber into which a process gas is introduced and from which an exhausted gas is discharged, a susceptor having a first region on which a semiconductor substrate is to be placed and a second region other than the first region, an electrode located in facing relation with the susceptor and cooperating with the susceptor to generate plasma therebetween for forming a thin film on the semiconductor substrate placed on the first region of the susceptor, and a ceramics insulator covering the second region of the susceptor therewith. The above-mentioned plasma-enhanced chemical vapor deposition apparatus enhances uniformity of a thin metal film to be formed on a semiconductor substrate, and further improves a barrier characteristic of the thin metal film.

Inventors: Taguwa; Tetsuya (Tokyo, JP)

Assignee: NEC Corporation

International Classification: H01J 37/32 (20060101); H01L 021/68 ()

Expiration Date: 01/02/2018