Patent Number: 6,167,837

Title: Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor

Abstract: A PECVD reactor for processing a single wafer. The reactor has a susceptor for holding a wafer horizontally, an apparatus for lifting the wafer from the susceptor for loading and unloading. The horizontally positioned thermal plate is positioned above the susceptor for uniform transfer of radiant heat energy from heat lamps to the wafer. The thermal plate also serves as an RF plate, being constructed of an electrically conductive material and connected to an RF transmission line and connector for receiving RF energy from an RF generator for the purpose of providing an RF field for plasma enhancement. The thermal plate is configured thinner near its edges, so as to space the plate further from the susceptor and thicker near the center, placing it closer to the susceptor.

Inventors: Cook; Robert C. (Livermore, CA)

Assignee: Torrex Equipment Corp.

International Classification: C23C 16/509 (20060101); C23C 16/48 (20060101); C23C 16/50 (20060101); H01J 37/32 (20060101); H01L 21/00 (20060101); C23C 016/00 (); H05H 001/00 ()

Expiration Date: 01/02/2018