Patent Number: 6,168,491

Title: Method of forming field emitter cell and array with vertical thin-film-edge emitter

Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

Inventors: Hsu; David S. Y. (Alexandria, VA), Gray; Henry F. (Alexandria, VA)

Assignee: The United States of America as represented by the Secretary of the Navy

International Classification: H01J 9/02 (20060101); H01J 009/02 ()

Expiration Date: 01/02/2018