Patent Number: 6,168,637

Title: Use of a large angle implant and current structure for eliminating a critical mask in flash memory processing

Abstract: A method and system for providing a flash memory cell on a semiconductor is disclosed. In one aspect, the method and system include providing a plurality of gate stacks and providing a drain implant at an angle. The plurality of gate stacks define a plurality of drain areas and a plurality of source areas. The angle is measured from a direction perpendicular to the surface of the semiconductor. The angle allows the plurality of gate stacks to block the drain implant from reaching the plurality of source areas. In another aspect, the method and system include providing a plurality of gate stacks and providing a source implant at an angle. The plurality of gate stacks define a plurality of drain areas and a plurality of source areas. The angle is measured from a direction perpendicular to the surface of the semiconductor. The angle allows the plurality of gate stacks to block the source implant from reaching the plurality of drain areas.

Inventors: Randolph; Mark (San Jose, CA), Thurgate; Timothy J. (Sunnyvale, CA), Luning; Scott D. (San Francisco, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/70 (20060101); H01L 21/8247 (20060101); H01L 021/8247 ()

Expiration Date: 01/02/2018