Patent Number: 6,168,659

Title: Method of forming gallium nitride crystal

Abstract: With an object of providing gallium nitride thick film crystals excelling in crystallization, the structure thereof is formed of an amorphous silicon dioxide thin film 2 formed on a silicon substrate 1 and then a single crystal silicon thin film 3 is formed on the foregoing amorphous silicon dioxide thin film 2 and further gallium nitride 4 is formed on this silicon thin film 3.

Inventors: Yuri; Masaaki (Ibaraki, JP), Ueda; Tetsuzo (Menlo Park, CA), Baba; Takaaki (Los Altos, CA)

Assignee: Matsushita Electronics Corporation

International Classification: H01L 21/02 (20060101); H01L 21/20 (20060101); C30B 025/18 ()

Expiration Date: 01/02/2018