Patent Number: 6,168,704

Title: Site-selective electrochemical deposition of copper

Abstract: A method is provided for selectively electrochemically depositing copper. The method includes forming a layer of dielectric material above a structure layer, forming a conductive layer above the layer of dielectric material and forming an opening in the conductive layer and the layer of dielectric material. The method also includes selectively forming at least one barrier metal layer and a copper seed layer only in the opening, the at least one barrier metal layer and the copper seed layer being conductively coupled to the conductive layer. The method further includes forming an insulating layer above the conductive layer, and selectively electrochemically depositing copper only in the opening.

Inventors: Brown; Thomas M. (Austin, TX), Hymes; Stephen W. (Austin, TX)

Assignee: Advanced Micro Device, Inc.

International Classification: C25D 5/02 (20060101); C25D 5/10 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); C25D 005/02 (); C25D 005/10 ()

Expiration Date: 01/02/2018