Patent Number: 6,168,726

Title: Etching an oxidized organo-silane film

Abstract: A process for etching an oxidized organo-silane film exhibiting a low dielectric constant and having a most preferred atomic composition of 52% hydrogen, 8% carbon, 19% silicon, and 21% oxygen. The process of etching deep holes in the organo-silane film while stopping on a nitride or other non-oxide layer is preferably performed in an inductively coupled high-density plasma reactor with a main etching gas mixture of a fluorocarbon, such as C.sub.4 F.sub.8, and argon while the pedestal electrode supporting the wafer is RF biased. For very deep and narrow holes, oxygen or nitrogen may be added to volatize carbon. In an integrated process in which an oxygen plasma is used either for the film etching or for post-etch treatments such as ashing or nitride removal, the oxygen plasma should be excited only when no RF bias is applied to the pedestal electrode, and thereafter the sample should be annealed in an inert environment to recover the low dielectric constant.

Inventors: Li; Zongyu (Cupertino, CA), Ding; Jian (San Jose, CA), Naik; Mehul (San Jose, CA)

Assignee: Applied Materials, Inc.

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/311 (20060101); B44C 001/22 ()

Expiration Date: 01/02/2018