Patent Number: 6,169,034

Title: Chemically removable Cu CMP slurry abrasive

Abstract: Abrasion of Cu metallization during CMP is reduced and residual slurry particulate removal facilitated by employing a CMP slurry containing a dispersion of soft mineral particles having high solubility in dilute acids. Embodiments include CMP Cu metallization with a slurry containing magnesium oxide particles and removing any residual magnesium oxide particles after CMP with an organic acid, such as citric acid or acetic acid, or a dilute inorganic acid, such as hydrochloric, phosphoric, boric or fluoboric acid.

Inventors: Avanzino; Steven C. (Cupertino, CA), Erb; Darrell M. (Los Altos, CA), Schonauer; Diana M. (San Jose, CA), Yang; Kai (Fremont, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: C09G 1/00 (20060101); C09G 1/02 (20060101); H01L 21/02 (20060101); H01L 21/321 (20060101); H01L 021/461 ()

Expiration Date: 01/02/2018