Patent Number: 6,169,037

Title: Semiconductor processing methods

Abstract: In one aspect, the invention encompasses a semiconductor processing method comprising contacting a surface with a liquid solution comprising at least one fluorine-containing species and a temperature of at least about 40.degree. C. In another aspect, the invention encompasses a method of passivating a silicon-comprising layer comprising contacting the layer with a liquid solution comprising hydrogen fluoride and a temperature of at least about 40.degree. C. In yet another aspect, the invention encompasses a method of forming hemispherical grain polysilicon comprising: a) forming a layer comprising substantially amorphous silicon over a substrate; b) contacting the layer comprising substantially amorphous silicon with a liquid solution comprising fluorine-containing species and a temperature of at least about 40.degree. C.; c) seeding the layer comprising substantially amorphous silicon; and d) annealing the seeded layer to convert at least a portion of the seeded layer to hemispherical grain polysilicon.

Inventors: Ping; Er-Xuan (Boise, ID), Li; Li (Meridian, ID)

Assignee: Micron Technology, Inc.

International Classification: C09K 13/00 (20060101); C09K 13/06 (20060101); H01L 21/02 (20060101); H01L 21/306 (20060101); H01L 021/302 (); H01L 021/461 ()

Expiration Date: 01/02/2018