Patent Number: 6,169,687

Title: High density and speed magneto-electronic memory for use in computing system

Abstract: A new type of magneto-electronic element, such as a spin transistor or hybrid hall effect device, can be used to construct memory systems to replace conventional cache, primary, secondary and long term (archival) storage. The magneto-electronic element is non-volatile, and has switching speeds and integration densities that compare favorably with conventional semiconductor random access memories, such as DRAM. In another embodiment, an integrated memory system may be constructed that synthesizes one or more previously disparate levels of conventional memory (i.e., a combination of primary and secondary storage) so that memory organization is further simplified and performance and cost are improved.

Inventors: Johnson; Mark B. (Springfield, VA)


International Classification: G11C 11/16 (20060101); G11C 11/02 (20060101); G11C 11/18 (20060101); G11C 11/56 (20060101); H01L 29/66 (20060101); H03K 19/18 (20060101); H03K 19/02 (20060101); G11B 5/37 (20060101); G11B 5/33 (20060101); G11C 011/14 ()

Expiration Date: 01/02/2018