Patent Number: 6,169,688

Title: Magnetic storage device using unipole currents for selecting memory cells

Abstract: A current flow passing a data selection line both in a data write operation and data readout operation is directed to the same direction. A soft ferromagnetic film having a coercivity smaller than that of a ferromagnetic film is formed on the ferromagnetic film via a nonmagnetic conductive film. A barrier metal layer having a projecting portion is formed on the soft ferromagnetic film. A metal conductive layer is formed at the top of the projecting portion of the barrier metal layer. An insulating interlayer is formed on the entire surface. A data selection line is formed mainly in a region where the metal conductive layer is not formed.

Inventors: Noguchi; Mitsuhiro (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: G11C 11/16 (20060101); G11C 11/02 (20060101); G11C 11/15 (20060101); G11C 011/14 ()

Expiration Date: 01/02/2018