Patent Number: 6,170,428

Title: Symmetric tunable inductively coupled HDP-CVD reactor

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present invention includes: a dual RF zone inductively coupled plasma source configuration capable of producing radially tunable ion currents across the wafer; a dual zone gas distribution system to provide uniform deposition properties across the wafer surface; temperature controlled surfaces to improve film adhesion and to control extraneous particle generation; a symmetrically shaped turbomolecular pumped chamber body to eliminate gas flow or plasma ground azimuthal asymmetries; a dual helium cooling zone electrostatic chuck to provide and maintain uniform wafer temperature during processing; an all ceramic/aluminum alloy chamber construction to eliminate chamber consumables; and a remote fluorine based plasma chamber cleaning system for high chamber cleaning rate without chuck cover plates.

Inventors: Redeker; Fred C. (Fremont, CA), Moghadam; Farhad (Los Gatos, CA), Hanawa; Hiroji (Sunnyvale, CA), Ishikawa; Tetsuya (Santa Clara, CA), Maydan; Dan (Los Altos, CA), Li; Shijian (San Jose, CA), Lue; Brian (Mountain View, CA), Steger; Robert J. (Cupertino, CA), Wong; Manus (San Jose, CA), Wong; Yaxin (San Jose, CA), Sinha; Ashok K. (Palo Alto, CA)

Assignee: Applied Materials, Inc.

International Classification: C23C 16/507 (20060101); C23C 16/50 (20060101); H01J 37/32 (20060101); C23C 016/00 ()

Expiration Date: 01/09/2018