Patent Number: 6,250,803

Title: Method for temperature measurement using dopant segregation into titanium silicide

Abstract: A method of measuring temperature of momentary anneals in the temperature range of around 900.degree. C. is disclosed. The method comprises the steps of providing a substrate of doped polysilicon or single crystal silicon, applying a blocking layer on a portion of the substrate, selectively forming silicide on the substrate adjacent opposite ends of the blocking layer to define a resistor, subjecting the resistor to a momentary anneal in the temperature range around 900.degree. C., and measuring interfacial resistance between the silicide and the substrate after the annealing step, the resistance correlating to anneal temperature.

Inventors: Ballantine; Arne W. (South Burlington, VT), Miles; Glen L. (Essex Junction, VT)

Assignee: International Business Machines Corporation

International Classification: G01K 7/22 (20060101); G01K 7/16 (20060101); G01K 007/16 ()

Expiration Date: 06/26/2018