Patent Number: 6,251,181

Title: Method for forming a solid solution alloy crystal

Abstract: A method for forming a solid solution alloy crystal includes forming a solid solution alloy crystal having at least the same diameter as a seed crystal. The seed crystal is exposed to a liquid containing a desired concentration of an alloying element to dissolve a portion of the seed crystal. The solid solution alloy crystal is then formed from the liquid. The method allows a large diameter solid solution alloy crystal to be grown in a reduced time or a larger diameter solid solution alloy crystal to be grown in a known fixed total process time.

Inventors: Deitch; Richard H. (Worthington, OH), Digges, Jr.; Thomas G. (Fredericksburg, VA)

Assignee: Virginia Semiconductor

International Classification: C30B 15/36 (20060101); C30B 15/00 (20060101); C30B 015/20 ()

Expiration Date: 06/26/2018