Patent Number: 6,251,183

Title: Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

Abstract: The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

Inventors: Iwancizko; Eugene (Lafayette, CO), Jones; Kim M. (Arvada, CO), Crandall; Richard S. (Boulder, CO), Nelson; Brent P. (Golden, CO), Mahan; Archie Harvin (Golden, CO)

Assignee: Midwest Research Institute

International Classification: C30B 25/10 (20060101); C30B 25/02 (20060101); C30B 025/14 ()

Expiration Date: 06/26/2018