Patent Number: 6,251,216

Title: Apparatus and method for plasma processing

Abstract: A plasma processing apparatus includes a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated. The main members of the reaction chamber are covered with protective members made of synthetic quartz.

Inventors: Okamura; Hideaki (Osaka, JP), Imai; Shinichi (Osaka, JP), Jiwari; Nobuhiro (Osaka, JP), Tohmori; Yoko (Osaka, JP)

Assignee: Matsushita Electronics Corporation

International Classification: H01J 37/32 (20060101); H05H 001/00 ()

Expiration Date: 06/26/2018